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Printmaking technique developed by artists of 20th century
Fluorine etching is a printmaking technique developed by a circle of artists working in Kraków and Warsaw in the first two decades of the twentieth century
Fluorine_etching
Chemical element with atomic number 9 (F)
Fluorine is a chemical element; it has symbol F and atomic number 9. It is the lightest halogen and exists at standard conditions as pale yellow diatomic
Fluorine
Emission of surface atoms through energetic particle bombardment
sputtering enhancement are not always well understood, although the case of fluorine etching of Si has been modeled well theoretically. Sputtering observed to occur
Sputtering
difluoride, bromine trifluoride, chlorine trifluoride and fluorine can be used for gaseous silicon etching. Xenon difluoride is most commonly used to etch silicon
Vapor_etching
Industrial process
Plasma etching is a form of plasma processing used to fabricate integrated circuits. It involves a high-speed stream of glow discharge (plasma) of an
Plasma_etching
Technique in microfabrication used to remove material and create structures
to orientation-dependent etching. The source gas for the plasma usually contains small molecules rich in chlorine or fluorine. For instance, carbon tetrachloride
Etching_(microfabrication)
Very small devices that incorporate moving components
to orientation-dependent etching. The source gas for the plasma usually contains small molecules rich in chlorine or fluorine. For instance, carbon tetrachloride
MEMS
effect of sodium etching is defluorination of the PTFE, stripping the fluorine molecules from the carbon backbone of the polymer. The fluorine-to-carbon atomic
Surface_treatment_of_PTFE
History of the chemical element fluorine
Fluorine is a relatively new element in human applications. In ancient times, only minor uses of fluorine-containing minerals existed. The industrial
History_of_fluorine
Chemical reaction
aminosulfurane fluorination of the corresponding free alcohols. Fluorinations with DAST can be carried out in conventional glass equipment, although etching of the
Fluorination with aminosulfuranes
Fluorination_with_aminosulfuranes
Technology in semiconductor device fabrication
Advanced Silicon Etching (ASE) is a deep reactive-ion etching (DRIE) technique to etch deep and high aspect ratio structures in silicon. ASE was created
Advanced_silicon_etching
Material used in semiconductor processing
Polymers tend to be etched easily by oxygen, fluorine, chlorine and other reactive gases used in plasma etching. Use of a hardmask involves an additional
Hardmask
Industry dealing with chemicals from fluorine
alkanes in the petrochemical industry, and etching of glass. One third of HF (one sixth of mined fluorine) is used to make synthetic cryolite (sodium
Fluorochemical_industry
Chemical compound
octafluorocyclobutane serves mainly as a passivation layer material in etching processes. Sometimes it is used as an etchant. It has also been investigated
Octafluorocyclobutane
Chemical compound
nature. It was first reported in 1930 by Ruff and Krug who prepared it by fluorination of chlorine; this also produced chlorine monofluoride (ClF) and the mixture
Chlorine_trifluoride
Chemical compound
It is prepared in modern times both by direct reaction of ammonia and fluorine and by a variation of Ruff's method. It is supplied in pressurized cylinders
Nitrogen_trifluoride
Founder of Lam Research Corporation
MIT, Lam worked on plasma etching research and engineering at Texas Instruments and Hewlett-Packard. Although plasma etching was widely used in R&D during
David_K._Lam
Biogeochemical cycle
manufacturing, aluminum production, glass etching, and the microelectronics/semiconductor industry. Fluorine can also enter the atmosphere as a product
Fluorine_cycle
Ion with formula HF2 and charge 1-
of fluoride salts with hydrofluoric acid. The commercial production of fluorine involves electrolysis of bifluoride salts. The bifluoride ion has a linear
Bifluoride
Chemical compound
and dissociates to xenon and fluorine atoms on the surface of silicon. Fluorine is the main etchant in the silicon etching process. The reaction describing
Xenon_difluoride
Semiconductor material, a surface modification of silicon
ion etching (RIE). Other methods for forming a similar structure include electrochemical etching, stain etching, metal-assisted chemical etching, and
Black_silicon
Class of chemical compounds
groups are joined by ether linkages. The bonds between carbon and oxygen or fluorine are strong. Perfluoropolyethers are a type of PFAS. The thermal and chemical
Perfluoropolyether
Chemical compound
also used in etching solutions for silicon wafers and as a soldering flux in high temperature soldering. Kwasnik, W. (1963). "4. Fluorine Compounds - Potassium
Potassium_tetrafluoroborate
Solution of hydrogen fluoride in water
as the fluorine source, including Teflon, fluoropolymers, fluorocarbons, and refrigerants such as freon. Many pharmaceuticals contain fluorine. Most high-volume
Hydrofluoric_acid
Chemical compound
Devilliers; Marius Chemla; Robert Faron; Renée Romano; Jean Pierre Cuer (2005). "Fluorine Compounds, Inorganic". In Ullmann (ed.). Encyclopedia of Industrial Chemistry
Ammonium_fluoride
Manufacturing process used to create integrated circuits
steps such as thermal oxidation, thin-film deposition, ion implantation, etching) during which electronic circuits are gradually created on a wafer, typically
Semiconductor device fabrication
Semiconductor_device_fabrication
Chemical compound
It is made of carbon, hydrogen, and fluorine. The name stems from the fact that it is methane (CH4) with a fluorine atom substituted for one of the hydrogen
Fluoromethane
Chemical compound
yield. Because of the dangers involved in the preparation of DAST (glass etching, possibility of exothermic events), it is often purchased from a commercial
Diethylaminosulfur trifluoride
Diethylaminosulfur_trifluoride
Medical condition
of industries including glass etching and electronics manufacturing. It is generated upon combustion of many fluorine-containing compounds such as products
Hydrofluoric_acid_burn
Chemical compound
iodoform and bromoform, and the exchange of the first two halogen atoms by fluorine is vigorous. By changing to a two step process, first forming a bromodifluoromethane
Fluoroform
Technique in chemistry and manufacturing
sciences to show his discovery of the new element fluorine. While trying to find elemental fluorine through electrolysis of fluoride salts, many chemists
Electrolysis
(single atom) substance known as a reactive species is generated. Oxygen or fluorine are the most common reactive species. Other gases used are N2/H2 where
Plasma_ashing
Chemical compound
problematic for the semiconductor industry, which uses high-purity fluorine for etching silicon wafers. Further impurities, such as iron, nickel, gallium
Manganese(IV)_fluoride
Chemical compound
naphthalide dissolved in dimethoxyethane is used as a PTFE etching solution that removes fluorine atoms from the surface, which get replaced by oxygen, hydrogen
Dimethoxyethane
Chemical element with atomic number 54 (Xe)
electronegative element than fluorine or oxygen, particularly carbon. Electron-withdrawing groups, such as groups with fluorine substitution, are necessary
Xenon
Chemical compound and greenhouse gas
as deep reactive-ion etching. A small fraction of the SF 6 breaks down in the plasma into sulfur and fluorine, with the fluorine ions performing a chemical
Sulfur_hexafluoride
Class of chemical compounds
reported to have nonlinear optical activity, and be useful as lubricants, etching agents, components of fuel cells, low-dielectric materials, and superhydrophobic
Perfluorocycloalkene
Chemical compound
greenhouse gas. Octafluoropropane can be produced either by electrochemical fluorination or by the Fowler process using cobalt fluoride. In the electronics industry
Octafluoropropane
Chemical compound
in certain etching operations of silicon. The electric dipole moment of trifluorosilane is 1.26 debye. The length of the silicon to fluorine bond is 1
Trifluorosilane
Chemical compound
8 kPa), with a constant flow of WF6 infused with a small amount of fluorine gas. The fluorine gas in the above method can be substituted by ClF, ClF3, or BrF3
Tungsten_hexafluoride
Chemical compound
94% HNO3, 6% N2O4 AK20: 80% HNO3, 20% N2O4 AK20F: 80% HNO3, 20% N2O4, fluorine-based inhibitor AK20I: 80% HNO3, 20% N2O4, iodine-based inhibitor AK20K:
Red_fuming_nitric_acid
American chemist
fluorine molecules with a silicon surface (a reaction that is key to semiconductor device etching), in which the silicon surface abstracts a fluorine
Sylvia_T._Ceyer
Condition in which there are elevated levels of the fluoride ion in the body
pharmaceuticals contain fluorine. These organofluorine compounds are not sources of fluoride poisoning, as the carbon–fluorine bond is too strong to release
Fluoride_toxicity
Transparent non-crystalline solid material
for glass that absorbs ultraviolet wavelengths. Fluorine lowers the dielectric constant of glass. Fluorine is highly electronegative and lowers the polarizability
Glass
Standard enthalpy change when a chemical bond is cleaved by homolysis
attributed to the substantial electronegativity difference between silicon and fluorine, which leads to a substantial contribution from both ionic and covalent
Bond_dissociation_energy
Device that emits light via optical amplification
barcode scanners, semiconductor chip manufacturing (photolithography, etching), laser surgery and skin treatments, cutting and welding materials, military
Laser
Chemical element with atomic number 40 (Zr)
However, it will dissolve in hydrochloric and sulfuric acid, especially when fluorine is present. Alloys with zinc are magnetic at less than 35 K. The melting
Zirconium
Chemical element with atomic number 14 (Si)
oxide layer nevertheless does not prevent reaction with the halogens; fluorine attacks silicon vigorously at room temperature, chlorine does so at about
Silicon
Molecule with three connected cyclohexane rings arranged in the "armchair" configuration
via an ionic pathway, and similar reactions are possible with gaseous fluorine (but chlorination is likely a radical reaction). The reaction products
Adamantane
Chemical element with atomic number 78 (Pt)
attacked by chlorine, bromine, iodine, and sulfur. It reacts vigorously with fluorine at 500 °C (932 °F) to form platinum tetrafluoride. Platinum is insoluble
Platinum
Chemical compound
β-(NH4)2[SiF6] has primitive hexagonal packing. In all three phases, 12 fluorine atoms neighbor the (NH4)+. Although bararite was claimed to be metastable
Ammonium_fluorosilicate
Industrial and food chemical
Pradhan, Reshab; Grewal, Harpreet Singh (2023-10-15). "Flexible and durable fluorine-free superhydrophobic films through sustainable approach". Chemical Engineering
Polydimethylsiloxane
Chemical element with atomic number 5 (B)
also an important chemical in the semiconductor industry for the plasma etching of metals and their oxides. Triethylborane is also injected into vapor
Boron
Electronic oscillator circuit
Other common impurities of concern are e.g. iron(III) (interstitial), fluorine, boron(III), phosphorus(V) (substitution), titanium(IV) (substitution,
Crystal_oscillator
Chemical compound
of the Stockholm Convention. POSF is synthesized by electrochemical fluorination of octanesulfonyl fluoride in anhydrous hydrogen fluoride by the equation:
Perfluorooctanesulfonyl fluoride
Perfluorooctanesulfonyl_fluoride
Form of carbon
trajectory which is explained by their high density. Diamond also reacts with fluorine gas above about 700 °C (1,292 °F). Diamond has a wide band gap of 5.5 eV
Diamond
Class of materials
surfaces is essentially a dry etching of the surface. This is achieved by filling a chamber with gas, such as oxygen, fluorine, or chlorine, and accelerating
Self-cleaning_surfaces
Chemical element with atomic number 22 (Ti)
that worsens the fatigue properties, so it must be removed by milling, etching, or electrochemical treatment. The working of titanium may include friction
Titanium
Hexagonal lattice made of carbon atoms
partial hydrogenation leads to hydrogenated graphene. Similarly, both-side fluorination of graphene (or chemical and mechanical exfoliation of graphite fluoride)
Graphene
phosphates for industrial use (including foodstuffs) — Determination of fluorine content — Alizarin complexone and lanthanum nitrate photometric method
List of ISO standards 3000–4999
List_of_ISO_standards_3000–4999
Wafer bonding process in semiconductor production
hydrogen and fluorine atoms. The bonding at room temperature is mostly based on van-der-Waals forces between those hydrogen and fluorine atoms. Compared
Direct_bonding
Chemical compound
congruent lithium niobate by domain reversal patterning and differential etching". Applied Physics Letters. 87 (23): 233106. Bibcode:2005ApPhL..87w3106G
Lithium_niobate
Perfluorinated carboxylic acid
Mining and Manufacturing Company) began producing PFOA by electrochemical fluorination in 1947. Starting in 1951, DuPont purchased PFOA from 3M for use in the
Perfluorooctanoic_acid
Chemical element with atomic number 55 (Cs)
packed array as do Na+ and Cl− in sodium chloride. Notably, caesium and fluorine have the lowest and highest electronegativities, respectively, among all
Caesium
Nano-scale semiconductor particles
Technologies Silver Nanoclusters Influence on Formation of Quantum Dots in Fluorine Phosphate Glasses". Scientific and Technical Journal of Information Technologies
Quantum_dot
Chemical compound
used, inter alia, for the plasma etching of silicon wafers) is obtainable from tris(trimethylsilyl)amine and fluorine at –40 °C in acetonitrile, suppressing
Tris(trimethylsilyl)amine
White powder insoluble in water
"Ultrafast nonlinear optical response of photoconductive ZnO films with fluorine nanoparticles". Optics Express. 19 (17): 16346–16355. Bibcode:2011OExpr
Zinc_oxide
Chemical compound
It can be used for selective etching of metal silicides and oxides versus their metal substrates and also for etching of silicon dioxide over silicon
Hexafluoroethane
Chemical compound
and in electrolytic generation of boron. H[BF4] is also used in aluminum etching and acid pickling.[citation needed] H[BF4] is used as a catalyst for alkylations
Fluoroboric_acid
Processes for treating wastewater produced as an industrial by-product
calcium chloride; hydrofluoric acid; potassium compounds; borax; chrome and fluorine-based compounds; cadmium and zinc-based compounds. The pollutants discharged
Industrial wastewater treatment
Industrial_wastewater_treatment
Nuclear operations in supplying fuel to French nuclear reactors
hexafluoride and fluorine for the manufacture of chip cards for telephones, GPS, etc.), The automotive industry: a mixture of fluorine and nitrogen for
Nuclear_fuel_cycle_in_France
hydrophobic polymer composed of a carbon chain saturated with fluorine atoms. The fluorine-carbon bond is largely ionic, producing a strong dipole. The
Biomaterial surface modifications
Biomaterial_surface_modifications
Fluorosurfactant and persistent organic pollutant
In 1949, 3M began producing PFOS-based compounds by electrochemical fluorination. In 1968, organofluorine compounds were detected in the blood serum of
Perfluorooctanesulfonic_acid
Award
1900 Louis Edward Levy Engineering Method and apparatus for acid blast etching of metal plates 1900 Pencoyd Iron Works Engineering Bridge construction
Elliott_Cresson_Medal
Carbon allotrope
permanganate and sulfuric acid. In another method GNRs were produced by plasma etching of nanotubes partly embedded in a polymer film. More recently, graphene
Graphene_nanoribbon
British software development company
database has a library of sticking coefficients for atomic oxygen, atomic fluorine, fluorocarbons, and silane radicals. For surface mechanisms such as specific
Quantemol
Management strategy for global warming
promising to be widely used for long-term cooling for outdoor applications." Fluorine-free reagents and SiO2 particle composite film 85% 95% 12.2 °C Manufactured
Passive daytime radiative cooling
Passive_daytime_radiative_cooling
Fitness for purpose of textiles
moisture retention, monodirectional moisture transmission, softness. Fluorine-containing durable water repellent makes a fabric water-resistant. N95
Textile_performance
Indian engineer
"Benchmarking diamond surface preparation and fluorination via inductively coupled plasma-reactive ion etching". Carbon. 228 119366. Bibcode:2024Carbo.22819366G
Pulickel_Ajayan
American chemist
modification dependent on Cu facets, reductive functionalization and fluorination toward diamond‑like phases (made and characterized F-diamane), covalent
Rodney_S._Ruoff
Chemical compound
V.; Tsygankova, E. V.; Reĭterov, V. M. (2007-11-01). "Features of the etching of an yttrium–lithium fluoride crystal in HNO3 solutions". Journal of Optical
Yttrium_lithium_fluoride
FLUORINE ETCHING
FLUORINE ETCHING
Girl/Female
American, British, English
From Lorraine; Lorraine is an Area in Eastern France
Girl/Female
Latin
Flower.
Girl/Female
American, Christian, French, German, Latin
Flower; Blossom; Blooming; Form of Florence
Boy/Male
Australian, French, Latin
Bloom; Flower
Boy/Male
Latin
In bloom.
Male
Romanian
Romanian form of Roman Latin Florian, FLORIN means "flower."
Surname or Lastname
English (mainly East Anglia and the southeast)
English (mainly East Anglia and the southeast) : from a Norman personal name composed of the Germanic elements hari, heri ‘army’ + mÄri, mÄ“ri ‘famous’.English : habitational name from Haremere Hall in Etchingham, Sussex, which is named from Old English hÄr ‘gray’ + mere ‘pool’.
Girl/Female
French, German, Latin
Florence; Blooming
Girl/Female
Australian, French, German, Latin, Romanian, Swiss
In Bloom; Florence; Blooming
Boy/Male
Latin
Laurel.
Boy/Male
Latin
In bloom.
FLUORINE ETCHING
FLUORINE ETCHING
Male
Norwegian
Danish and Norwegian form of Old Norse Friðþjófr, FRIDTHJOF means "peace-thief."
Girl/Female
Greek
Pearl.
Boy/Male
Hindu, Indian, Tamil
Good Man and God Way
Girl/Female
Latin
Bear.
Boy/Male
American, Australian, British, English, German, Norse, Norwegian, Scandinavian
Powerful Army; Strong Counselor; From the Ancient Personal Name Ragnar
Boy/Male
Indian
Girl/Female
Indian, Kannada, Sindhi
Surrendered to God; To Donate
Male
Celtic
, divine noble (or leader).
Boy/Male
Greek
Father of Castor.
Boy/Male
Hindu, Indian
King; Leader
FLUORINE ETCHING
FLUORINE ETCHING
FLUORINE ETCHING
FLUORINE ETCHING
FLUORINE ETCHING
n.
A non-metallic, gaseous element, strongly acid or negative, or associated with chlorine, bromine, and iodine, in the halogen group of which it is the first member. It always occurs combined, is very active chemically, and possesses such an avidity for most elements, and silicon especially, that it can neither be prepared nor kept in glass vessels. If set free it immediately attacks the containing material, so that it was not isolated until 1886. It is a pungent, corrosive, colorless gas. Symbol F. Atomic weight 19.
n.
Calcium fluoride, a mineral of many different colors, white, yellow, purple, green, red, etc., often very beautiful, crystallizing commonly in cubes with perfect octahedral cleavage; also massive. It is used as a flux. Some varieties are used for ornamental vessels. Also called fluor spar, or simply fluor.
n.
A colorless, crystalline hydrocarbon, C13H10 having a beautiful violet fluorescence; whence its name. It occurs in the higher boiling products of coal tar, and is obtained artificially.
a.
Combined with fluorine; subjected to the action of fluoride.
a.
Pertaining to, or containing, hydrogen and fluorine; fluohydric; as, hydrofluoric acid.
n.
A binary compound of fluorine with another element or radical.
n.
See Fluorite.
n.
A fluoride.
a.
Pertaining to, obtained from, or containing, fluorine.
a.
Pertaining to, derived from, or consisting of, fluorine and boron.
a.
Composed of, or derived from, silicon and fluorine.
n.
Material for the construction of a floor or floors.
n.
A manganese phosphate near triplite, but containing hydroxyl instead of fluorine.
p. pr. & vb. n.
of Flour
n.
Fluorine.
n.
Alt. of Fluocerite
n.
A silver coin of Florence, first struck in the twelfth century, and noted for its beauty. The name is given to different coins in different countries. The florin of England, first minted in 1849, is worth two shillings, or about 48 cents; the florin of the Netherlands, about 40 cents; of Austria, about 36 cents.
a.
Containing, or composed of, silicon and fluorine; especially, denoting the compounds called silicofluorides.