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Type of transistor
A diffused junction transistor is a transistor formed by diffusing dopants into a semiconductor substrate. The diffusion process was developed later than
Diffused_junction_transistor
Type of bipolar junction transistor
The germanium alloy-junction transistor, or alloy transistor, was an early type of bipolar junction transistor, developed at General Electric and RCA in
Alloy-junction_transistor
Transistor that uses both electrons and holes as charge carriers
predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused transistors, along with other components
Bipolar_junction_transistor
Primitive type of bipolar junction transistor
The grown-junction transistor was the first type of bipolar junction transistor made. It was invented by William Shockley at Bell Labs on June 23, 1948
Grown-junction_transistor
Solid-state electrically operated switch also used as an amplifier
cutoff frequency Band gap Digital electronics Diffused junction transistor Moore's law Optical transistor Magneto-electric spin-orbit Nanoelectromechanical
Transistor
Type of transistor
A unijunction transistor (UJT) is a three-lead electronic semiconductor device with only one junction. It acts exclusively as an electrically controlled
Unijunction_transistor
Type of field-effect transistor
The junction field-effect transistor (JFET) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that
JFET
Transistor with four active terminals
injection logic gates. Diffused planar silicon bipolar junction transistor, used in some integrated circuits. This transistor, apart from the three electrodes
Tetrode_transistor
Type of field-effect transistor
metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated
MOSFET
First successful type of transistor, developed in 1947
The point-contact transistor was the first type of transistor to be successfully demonstrated. It was developed by research scientists John Bardeen and
Point-contact_transistor
Type of solid state switch
vertical PNP bipolar junction transistor. This additional p+ region creates a cascade connection of a PNP bipolar junction transistor with the surface n-channel
Insulated-gate bipolar transistor
Insulated-gate_bipolar_transistor
concentration constant). Germanium diffused junction transistors were used by IBM in their Saturated Drift Transistor Resistor Logic (SDTRL), used in the
Drift-field_transistor
inventions in history. Transistors are broadly classified into two categories: bipolar junction transistor (BJT) and field-effect transistor (FET). The principle
History_of_the_transistor
Multi-transistor electronics configuration
bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified
Darlington_transistor
Type of transistor
transistor (FET) is a type of transistor that uses an electric field to control the current through a semiconductor. It comes in two types: junction FET
Field-effect_transistor
Magnetic effect in insulators between ferromagnets
magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by
Tunnel_magnetoresistance
Semiconductor light source
circuit that causes the LED to flash with a typical period of one second. In diffused lens LEDs, this circuit is visible as a small black dot. Most flashing
Light-emitting_diode
Experimental transistor
1952 published first investigations of a transistor containing the basic elements of the TFET, a gated p-n junction. The reported surface conductivity control
Tunnel field-effect transistor
Tunnel_field-effect_transistor
Family of digital circuits
the area of a bipolar junction transistor. The main reason is that the MOSFET is self-insulating and does not require p–n junction isolation from neighboring
PMOS_logic
Bipolar junction transistor operated in the avalanche breakdown region
An avalanche transistor is a bipolar junction transistor designed for operation in the region of its collector-current/collector-to-emitter voltage characteristics
Avalanche_transistor
Diode that emits light from an organic compound
controlled sequentially, one by one, whereas AMOLED control uses a thin-film transistor (TFT) backplane to directly access and switch each individual pixel on
OLED
Type of transistor developed by Philco in 1953
The surface-barrier transistor is a type of transistor developed by Philco in 1953 as an improvement to the alloy-junction transistor and the earlier point-contact
Surface-barrier_transistor
Transistor using different semiconductor materials
A heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) that uses different semiconductor materials for the emitter and
Heterojunction bipolar transistor
Heterojunction_bipolar_transistor
Four-layer solid-state current-controlling device
anode and cathode momentarily with a push-button switch or transistor across the junction. When a negative voltage is applied to the anode and a positive
Silicon_controlled_rectifier
Diode that works using quantum tunneling
state-of-the-art, with better performance at high frequencies than any transistor-based front end. The tunnel diode can also be used as a low-noise microwave
Tunnel_diode
Electronic device/component that increases the strength of a signal
the bipolar junction transistor (BJT) in 1948. They were followed by the invention of the metal–oxide–semiconductor field-effect transistor (MOSFET) by
Amplifier
Type of field-effect transistor
field-effect transistor) is a field-effect transistor semiconductor device similar to a JFET with a Schottky (metal–semiconductor) junction instead of a
MESFET
Device that prevents a transistor from saturating
Schottky-clamped transistor. Standard transistor–transistor logic (TTL) uses transistors as saturated switches. A saturated transistor is turned on hard
Schottky_transistor
Type of non-planar transistor
A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the
Fin_field-effect_transistor
Type of field-effect transistor
An organic field-effect transistor (OFET) is a field-effect transistor using an organic semiconductor in its channel. OFETs can be prepared either by vacuum
Organic field-effect transistor
Organic_field-effect_transistor
Central computer component that executes instructions
continued to build processors out of bipolar transistor–transistor logic (TTL) chips because bipolar junction transistors were faster than MOS chips up until the
Central_processing_unit
Type of field-effect transistor
high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating
High-electron-mobility transistor
High-electron-mobility_transistor
Form of digital logic family in integrated circuits
in the 1970s. In the late 1960s, bipolar junction transistors were faster than (p-channel) MOS transistors then used and were more reliable, but they
Depletion-load_NMOS_logic
Two-terminal electronic component
Shockley ideal diode equation or the diode law (named after the bipolar junction transistor co-inventor William Bradford Shockley) models the exponential current–voltage
Diode
Form of transistor that emits light
An organic light-emitting transistor (OLET) is a form of transistor that emits light. These transistors have potential for digital displays and on-chip
Organic light-emitting transistor
Organic_light-emitting_transistor
Field-effect transistor device
A thin-film transistor (TFT) is a special type of field-effect transistor (FET) where the transistor is made by thin-film deposition. TFTs are grown on
Thin-film_transistor
Type of junction-gate field effect transistor
The static induction transistor (SIT) is a type of field-effect transistor (FET) capable of high-speed and high-power operation, with low distortion and
Static_induction_transistor
Ballistic deflection transistors (BDTs) are electronic devices, developed since 2006, for high-speed integrated circuits, which is a set of circuits bounded
Ballistic deflection transistor
Ballistic_deflection_transistor
Pictogram used to represent various electrical and electronic devices or functions
junction transistor (BJT) PNP bipolar junction transistor (BJT) NPN Darlington transistor PNP Darlington transistor NPN Phototransistor N-channel junction gate
Electronic_symbol
Electronic component
Native transistor Other transistors Bipolar junction transistor (BJT) Darlington transistor Diffused junction transistor Field-effect transistor (FET)
Transient-voltage-suppression diode
Transient-voltage-suppression_diode
A light-emitting transistor or LET is a form of transistor that emits light. Higher efficiency than light-emitting diode (LED) is possible. Reported in
Light-emitting_transistor
Type of transistor
The organic electrochemical transistor (OECT) is an organic electronic device which functions like a transistor. The current flowing through the device
Organic electrochemical transistor
Organic_electrochemical_transistor
Device that controls current between electrodes
pentode tube, although usually using much lower voltages, is the junction field-effect transistor (JFET). Vacuum tubes are commonly described using characteristic
Vacuum_tube
Discrete device in an electronic system
LDMOS (lateral diffused MOSFET) MuGFET (multi-gate field-effect transistor) FinFET (fin field-effect transistor) TFT (thin-film transistor) FeFET (ferroelectric
Electronic_component
Integrated circuit customized for a specific task
Gate array design is a manufacturing method in which diffused layers, each consisting of transistors and other active devices, are predefined and electronics
Application-specific integrated circuit
Application-specific_integrated_circuit
Late vacuum tube design designed to compete with transistors
bipolar junction transistors, and were much smaller than conventional tubes of the day, almost approaching the compactness of early discrete transistor casings
Nuvistor
Semiconductor device
development of the GTO, and insulated-gate bipolar transistors (IGBT), which are members of the transistor family. They are also used in the starter circuits
Gate_turn-off_thyristor
DC linear voltage regulator
{R_{1}}{R_{2}}}\right)V_{\text{ref}}\ .} If a bipolar transistor is used, as opposed to a field-effect transistor or JFET, significant additional power may be
Low-dropout_regulator
Type of field-effect transistor
A ferroelectric field-effect transistor (Fe FET) is a type of field-effect transistor that includes a ferroelectric material sandwiched between the gate
Fe_FET
Converts light into current
Any p–n junction, if illuminated, is potentially a photodiode. Semiconductor devices such as diodes, transistors and ICs contain p–n junctions, and will
Photodiode
Electrostatic discharge (ESD) protection device
connected to the I/O pad under protection. A parasitic NPN bipolar junction transistor (BJT) is thus formed with the drain (n-type) acting as the collector
GgNMOS
MOSFET that can handle significant power levels
favour of the Vertical Diffused MOS (VDMOS) structure (also called Double-Diffused MOS or simply DMOS) and the LDMOS (laterally diffused MOS) structure. The
Power_MOSFET
Diode that allows current to flow in the reverse direction at a specific voltage
connected in series with a forward-biased silicon diode (or a transistor B–E junction) manufactured on the same chip. The forward-biased diode has a
Zener_diode
Type of field-effect transistor
A ChemFET is a chemically-sensitive field-effect transistor, that is a field-effect transistor used as a sensor for measuring chemical concentrations
Chemical field-effect transistor
Chemical_field-effect_transistor
Technology for constructing integrated circuits
/ˈsiːmɒs/ SEE-moss) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs
CMOS
Type of diode
one photon can be registered with these electronic devices. Avalanche transistor Transient-voltage-suppression diode L. W. Turner, (ed.), Electronics Engineer's
Avalanche_diode
Form of digital logic family in integrated circuits
field-effect transistors) to implement logic gates and other digital circuits. NMOS transistors operate by creating an inversion layer in a p-type transistor body
NMOS_logic
A synaptic transistor is an electrical device that can learn in ways similar to a neural synapse. It optimizes its own properties for the functions it
Synaptic_transistor
MOS field-effect transistor with more than one gate
field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The
Multigate_device
Electronic circuit formed on a small, flat piece of semiconductor material
creation of high-density ICs. Unlike bipolar transistors, which required additional steps for p–n junction isolation, MOSFETs could be easily isolated
Integrated_circuit
Type of MOSFET where the gate is electrically isolated
as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate
Floating-gate_MOSFET
Type of voltage regulator
output transistor. The shunt regulator works by providing a path from the supply voltage to ground through a variable resistance (the main transistor is in
Linear_regulator
Connector used to connect to mains power
Native transistor Other transistors Bipolar junction transistor (BJT) Darlington transistor Diffused junction transistor Field-effect transistor (FET)
AC_power_plugs_and_sockets
Junction-Less nanowire transistor (JLNT) is a type of Field-effect transistor (FET) in which the channel consists of one or more nanowires and does not
Junctionless nanowire transistor
Junctionless_nanowire_transistor
Electronic component that exploits the electronic properties of semiconductor materials
The field may be applied by a reverse-biased p–n junction, forming a junction field-effect transistor (JFET) or by an electrode insulated from the bulk
Semiconductor_device
Electronic device
transistor (SET) is a sensitive electronic device based on the Coulomb blockade effect. In this device the electrons flow through a tunnel junction between
Single-electron_transistor
Electronic component
reliable low-voltage support capacitor to complement their newly invented transistor. With the development of plastic materials by organic chemists during
Capacitor
A pentode transistor is any transistor having five active terminals. One early pentode transistor was developed in the early 1950s as an improvement over
Pentode_transistor
Other IC package types include diode outline (DO), transistor outline (TO), and small outline transistor (SOT). QUADRACs that use metal electrode leadless
Quadrac
Vacuum tube used to display images
electromechanical meter, which later came to be used on higher-end tuners when transistor sets lacked the high voltage required to drive the device. The same type
Cathode_ray_tube
Nonlinear two-terminal fundamental circuit element
fundamentally from that of a metal oxide semiconductor transistor, which is capacitor-based. Unlike the transistor, the final state of the memristor in terms of
Memristor
Potential transistor-like device
sensitive transistor, also known as the spin transistor, spin field-effect transistor (spinFET), Datta–Das spin transistor or spintronic transistor (named
Spin_transistor
Semiconductor diode
employed as Baker clamps in parallel with the collector-base junctions of the bipolar transistors to prevent their saturation, thereby greatly reducing their
Schottky_diode
System designed to maintain a constant voltage
require replacement. Modern designs now use solid state technology (transistors) to perform the same function that the relays perform in electromechanical
Voltage_regulator
Solar power cell with multiple band gaps from different materials
Multi-junction (MJ) solar cells are solar cells with multiple p–n junctions made of different semiconductor materials. Each material's p–n junction will
Multi-junction_solar_cell
Double-diffused MOSFET
LDMOS (laterally-diffused metal-oxide semiconductor) is a planar double-diffused MOSFET (metal–oxide–semiconductor field-effect transistor) used in amplifiers
LDMOS
Type of semiconductor
unijunction transistor (PUT) is a three-lead electronic semiconductor device which is similar in its characteristics to a unijunction transistor (UJT), except
Programmable unijunction transistor
Programmable_unijunction_transistor
Electronic circuits that utilize digital signals
invented the point-contact transistor at Bell Labs in 1947, followed by William Shockley inventing the bipolar junction transistor at Bell Labs in 1948. At
Digital_electronics
Solid-state semiconductor device
the gate through the p-n junction under the gate. This switches on a structure composed by an NPN transistor and a PNP transistor, which has the gate as
TRIAC
Type of solid-state switch
a combination of Greek language θύρα, meaning "door" or "valve", and transistor) is a solid-state semiconductor device which can be thought of as being
Thyristor
Part of computer memory
memory cells. Modern random-access memory (RAM) uses MOS field-effect transistors (MOSFETs) as flip-flops, along with MOS capacitors for certain types
Memory_cell_(computing)
Type of field-effect transistor
An EOSFET or electrolyte–oxide–semiconductor field-effect transistor is a FET, like a MOSFET, but with an electrolyte solution replacing the metal for
EOSFET
Native transistor Other transistors Bipolar junction transistor (BJT) Darlington transistor Diffused junction transistor Field-effect transistor (FET)
List_of_RF_connector_types
the Heterojunction bipolar transistor (HBT) is that the emitter–base interface is the same as in a bipolar junction transistor (BJT) with the blocking energy
Heterostructure-emitter bipolar transistor
Heterostructure-emitter_bipolar_transistor
Power amplifier
and produces a high-current drive input for the gate of a high-power transistor such as an IGBT or power MOSFET. Gate drivers can be provided either on-chip
Gate_driver
Semiconductor–semiconductor junction
combinations of p-type and n-type semiconductors; for example, the bipolar junction transistor (BJT) is a semiconductor in the form n–p–n or p–n–p. Combinations
P–n_junction
Theoretical transistor
A nanoscale vacuum-channel transistor (NVCT) is a transistor in which the electron transport medium is a vacuum, much like a vacuum tube. In a traditional
Nanoscale vacuum-channel transistor
Nanoscale_vacuum-channel_transistor
Type of electrical current converter
converter comprises two inductors, two capacitors, a switch (usually a transistor), and a diode. Its schematic can be seen in figure 1. It is an inverting
Ćuk_converter
Semiconductor technology
integrates two semiconductor technologies, those of the bipolar junction transistor and the CMOS (complementary metal–oxide–semiconductor) logic gate
BiCMOS
An oxide thin-film transistor (oxide TFT) or metal oxide thin film transistor is a type of thin film transistor where the semiconductor is a metal oxide
Oxide_thin-film_transistor
Type of magnetometer
magnetic fields, based on superconducting loops containing Josephson junctions. SQUIDs are sensitive enough to measure magnetic fields as low as 5×10−18
SQUID
Devices that measure magnetic field strength using the Hall effect
which were limited to laboratory instruments. Even early generation transistor technology was unsuited; it was only with the development of the low-cost
Hall_effect_sensor
Electrical connector designed to work at radio frequencies
Native transistor Other transistors Bipolar junction transistor (BJT) Darlington transistor Diffused junction transistor Field-effect transistor (FET)
RF_connector
Vacuum tube which generates high-frequency radio waves
Native transistor Other transistors Bipolar junction transistor (BJT) Darlington transistor Diffused junction transistor Field-effect transistor (FET)
Gyrotron
Type of diode
breakdown occurs, internal positive feedback (impact ionization or two transistor feedback) ensures that the diode enters a region of negative dynamic resistance
DIAC
Light dependent resistor
Native transistor Other transistors Bipolar junction transistor (BJT) Darlington transistor Diffused junction transistor Field-effect transistor (FET)
Photoresistor
Type of semiconductor
(OLED), organic solar cells, organic field-effect transistors (OFET), electrochemical transistors and recently in biosensing applications. Organic semiconductors
Organic_semiconductor
Highly sensitive semiconductor electronic device
silicon and germanium and the investigation of optical detection using p-n junctions predate this patent. Photodiodes generally operate by impact ionization
Avalanche_photodiode
Array of logic gates that are reprogrammable
cores exist alongside the programmable fabric, but they are built out of transistors instead of LUTs so they have ASIC-level performance and power consumption
Field-programmable_gate_array
DC-DC voltage step-down power converter
semiconductors (a diode and a transistor, although modern buck converters frequently replace the diode with a second transistor used for synchronous rectification)
Buck_converter
DIFFUSED JUNCTION-TRANSISTOR
DIFFUSED JUNCTION-TRANSISTOR
Boy/Male
Australian, Biblical, Christian, Hebrew
Light; Who Diffuses Light; Whom God Enlightens
Girl/Female
Indian, Punjabi, Sikh
Illuminated; Infused Lamp
Girl/Female
Indian
Helper, Publisher, Diffuser, Spreader, Protector
Girl/Female
Muslim/Islamic
Publisher Diffuser; Spreader
Boy/Male
Sikh
Illuminated, infused lamp, Bright future
Biblical
He will enlighten or diffuse light;
Boy/Male
Biblical Hebrew
My light, who diffuses light.
Girl/Female
Muslim
Helper, Publisher, Diffuser, Spreader, Protector
Girl/Female
Muslim
Helper, Publisher, Diffuser, Spreader, Protector
Boy/Male
Buddhist, Indian, Japanese
Mysterious Function
Boy/Male
American, Australian, Biblical, Chinese, Christian
Light; Who Diffuses Light; Whom God Enlightens
Girl/Female
Arabic, Muslim, Sindhi
Diffuser; Spreader; Publisher
Boy/Male
Sikh
Illuminated, infused lamp, Bright future
Girl/Female
Indian, Punjabi, Sikh
Absorbed; Imbued; Infused
Boy/Male
Biblical American
My light, who diffuses light.
Biblical
my light; who diffuses light;Jehovah enlightens, arouses or who diffuses light;
Girl/Female
Hindu, Indian, Punjabi, Sikh
Imbued; Infused; Absorbed in Love
Girl/Female
Indian
Helper, Publisher, Diffuser, Spreader, Protector
Girl/Female
Indian
Helper, Publisher, Diffuser, Spreader, Protector
Girl/Female
Muslim
Helper, Publisher, Diffuser, Spreader, Protector
DIFFUSED JUNCTION-TRANSISTOR
DIFFUSED JUNCTION-TRANSISTOR
Boy/Male
Tamil
Lord Ganesh, Against desire
Boy/Male
Gujarati, Hindu, Indian, Kannada, Malayalam, Marathi, Tamil, Telugu
Free; Without Any Owner
Boy/Male
Afghan, Arabic, Celebrity, Indian, Muslim
One who has Triple Strength; First Month of the Parsi Year when the Sun is in Aries; Spring
Boy/Male
Hindu, Indian
One who has Achieved Glory
Boy/Male
Arthurian Legend
Sons of Lot.
Boy/Male
Hindu, Indian
Light of Feets
Boy/Male
American, Australian, Biblical, British, Chinese, Christian, English, Greek, Hebrew, Welsh
Praise; Heart; Courageous and Praise; Father; Poet; Courageous; Large Hearted
Boy/Male
English
Tucker of doth.
Girl/Female
Muslim
To believe in gods will
Girl/Female
Tamil
Eiravati | à®à®ˆà®°à®¾à®µà®¤à¯€
Lightening, Ravi river
DIFFUSED JUNCTION-TRANSISTOR
DIFFUSED JUNCTION-TRANSISTOR
DIFFUSED JUNCTION-TRANSISTOR
DIFFUSED JUNCTION-TRANSISTOR
DIFFUSED JUNCTION-TRANSISTOR
v. i.
To be diffused; to spread.
n.
A quantity so connected with another quantity, that if any alteration be made in the latter there will be a consequent alteration in the former. Each quantity is said to be a function of the other. Thus, the circumference of a circle is a function of the diameter. If x be a symbol to which different numerical values can be assigned, such expressions as x2, 3x, Log. x, and Sin. x, are all functions of x.
n.
The act of anointing, smearing, or rubbing with an unguent, oil, or ointment, especially for medical purposes, or as a symbol of consecration; as, mercurial unction.
n.
The place or point of union, meeting, or junction; specifically, the place where two or more lines of railway meet or cross.
n.
The act of joining, or the state of being joined; union; combination; coalition; as, the junction of two armies or detachments; the junction of paths.
imp. & p. p.
of Diffuse
n.
The appropriate action of any special organ or part of an animal or vegetable organism; as, the function of the heart or the limbs; the function of leaves, sap, roots, etc.; life is the sum of the functions of the various organs and parts of the body.
a.
Poured out; widely spread; not restrained; copious; full; esp., of style, opposed to concise or terse; verbose; prolix; as, a diffuse style; a diffuse writer.
v. t.
To sell by auction.
v. t.
To supply with an organ or organs having a special function or functions.
n.
One who, or that which, diffuses.
n.
The things sold by auction or put up to auction.
v. t.
To give sanction to; to ratify; to confirm; to approve.
a.
Spread abroad; dispersed; loose; flowing; diffuse.
v. t.
The act of uniting, or the state of being united; junction.
adv.
In a diffuse manner.
v. t.
To pour out and cause to spread, as a fluid; to cause to flow on all sides; to send out, or extend, in all directions; to spread; to circulate; to disseminate; to scatter; as to diffuse information.
n.
The act of anointing, or the state of being anointed; unction; specifically (Med.), the rubbing of ointments into the pores of the skin, by which medicinal agents contained in them, such as mercury, iodide of potash, etc., are absorbed.
v. i.
To pass by spreading every way, to diffuse itself.
p. pr. & vb. n.
of Diffuse